BUJ103 Datasheet - NXP

Silicon Diffused Power Transistor

BUJ103 General Description

BUJ103A High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO I.

BUJ103 Datasheet (103.02 KB)

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BUJ103

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NXP ↗

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Silicon diffused power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product speciﬁcation August 1998 Philips Semiconductors Product speci.

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BUJ103 Silicon Diffused Power Transistor NXP

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BUJ103 General Description

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