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MMG3008NT1 - Heterojunction Bipolar Transistor

Description

Figure 1.

Table 6.

Table 7.

Features

  • Frequency: 0 to 6000 MHz.
  • P1dB: 15 dBm @ 900 MHz.
  • Small--Signal Gain: 18.5 dB @ 900 MHz.
  • Third Order Output Intercept Point: 26 dBm @ 900 MHz.
  • Single 5 V Supply.
  • Internally Matched to 50 Ohms.
  • Cost--effective SOT--89 Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3008NT1 Rev. 7, 9/2014 MMG3008NT1 0--6000 MHz, 18.5 dB 15 dBm InGaP HBT GPA 12 3 SOT--89 Table 1. Typical Performa.

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Datasheet Details

Part number MMG3008NT1
Manufacturer NXP
File Size 397.50 KB
Description Heterojunction Bipolar Transistor
Datasheet download datasheet MMG3008NT1 Datasheet
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    LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3008NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF. Features  Frequency: 0 to 6000 MHz  P1dB: 15 dBm @ 900 MHz  Small--Signal Gain: 18.
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