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MMG3008NT1 Datasheet

Heterojunction Bipolar Transistor

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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3008NT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--
signal RF.
Features
Frequency: 0 to 6000 MHz
P1dB: 15 dBm @ 900 MHz
Small--Signal Gain: 18.5 dB @ 900 MHz
Third Order Output Intercept Point: 26 dBm @ 900 MHz
Single 5 V Supply
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Document Number: MMG3008NT1
Rev. 7, 9/2014
MMG3008NT1
0--6000 MHz, 18.5 dB
15 dBm
InGaP HBT GPA
12
3
SOT--89
Table 1. Typical Performance (1)
Characteristic
900 2140 3500
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp
18.5 16
13 dB
Input Return Loss
(S11)
IRL --18 --22 --20 dB
Output Return Loss
(S22)
ORL --20 --18 --16 dB
Power Output @1dB P1dB 15 14 14 dBm
Compression
Third Order Output
Intercept Point
OIP3 26 25.5
1. VCC = 5 Vdc, TA = 25C, 50 ohm system.
25 dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol Value
VCC
6
ICC
80
Pin
10
Tstg --65 to +150
TJ
150
Unit
V
mA
dBm
C
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 86C, 5 Vdc, 38 mA, no RF applied
RJC
84
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
C/W
Freescale Semiconductor, Inc., 2005--2008, 2012, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3008NT1
1


NXP Semiconductors Electronic Components Datasheet

MMG3008NT1 Datasheet

Heterojunction Bipolar Transistor

No Preview Available !

Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Small--Signal Gain (S21)
Input Return Loss (S11)
Gp
17
18.5
IRL
--18
Output Return Loss (S22)
ORL
--20
Power Output @ 1dB Compression
P1dB
15
Third Order Output Intercept Point
OIP3
26
Noise Figure
NF
4
Supply Current (1)
ICC
32
38
48
Supply Voltage (1)
VCC
5
1. For reliable operation, the junction temperature should not exceed 150C.
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Table 5. Functional Pin Description
Pin
Number
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
2
123
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Class
1A
A
IV
Rating
Package Peak Temperature
Unit
1
260
C
MMG3008NT1
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number MMG3008NT1
Description Heterojunction Bipolar Transistor
Maker NXP
Total Page 3 Pages
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