PBSS4032NX Datasheet, NXP

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* Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High .

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* Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1..

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX. 1.2 Features and benefits
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