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PBSS4032NX Datasheet 4.7 A NPN low VCEsat (BISS) transistor

Manufacturer: NXP Semiconductors

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PX.

1.2

Overview

www.DataSheet4U.com PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev.

01 — 1 April 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.