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PBSS4112PANP Datasheet

Manufacturer: NXP Semiconductors
PBSS4112PANP datasheet preview

Datasheet Details

Part number PBSS4112PANP
Datasheet PBSS4112PANP_NXP.pdf
File Size 360.11 KB
Manufacturer NXP Semiconductors
Description NPN/NPN low VCEsat (BISS) transistor
PBSS4112PANP page 2 PBSS4112PANP page 3

PBSS4112PANP Overview

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

PBSS4112PANP Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High efficiency due to less heat generation
  • AEC-Q101 qualified 1.3

PBSS4112PANP from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
nexperia Logo PBSS4112PANP 1A NPN/PNP low VCEsat (BISS) transistor nexperia
nexperia Logo PBSS4112PAN 1A NPN/NPN low VCEsat (BISS) transistor nexperia
NXP Semiconductors logo - Manufacturer

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