PBSS4112PANP datasheet, transistor equivalent, NXP

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PBSS4112PANP Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.

PBSS4112PANP Application

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g..

PBSS4112PANP Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. 1.2 Features and benefit.

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