PBSS4230T Datasheet - NXP

NPN low VCEsat (BISS) transistor

PBSS4230T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications. AP

PBSS4230T General Description

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. MARKING TYPE NUMBER PBSS4230T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS423.

PBSS4230T Datasheet (47.87 KB)

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PBSS4230T

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NXP ↗

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47.87 KB

Description:

Npn low vcesat (biss) transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product speciﬁcation 2003 Sep 29 Philips Semiconduc.

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PBSS4230T NPN low VCEsat BISS transistor NXP

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PBSS4230T Features

PBSS4230T General Description

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