Download PBSS4230T Datasheet PDF
NXP Semiconductors
PBSS4230T
FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High efficiency leading to less heat generation - Reduced printed-circuit board requirements - Cost effective alternative to MOSFETs in specific applications. APPLICATIONS - Power management - DC/DC conversion - Supply line switching - Battery charger - LCD backlighting. - Peripheral driver - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP plement: PBSS5230T. MARKING TYPE NUMBER PBSS4230T Note 1. - = p: made in Hong Kong. - = t: made in Malaysia. - = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4230T - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) - 3D Top view QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base...