PBSS5350S Datasheet - NXP

50 V low VCEsat PNP transistor

PBSS5350S Features

* High power dissipation (830 mW)

* Ultra low collector-emitter saturation voltage

* 3 A continuous current

* High current switching

* Improved device reliability due to reduced heat generation APPLICATIONS

* Medium power switching and muting

PBSS5350S General Description

PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4350S. MARKING TYPE NUMBER PBSS5350S MARKING CODE S5350S Fig.1 1 handbook, halfpage PBSS5350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter vol.

PBSS5350S Datasheet (72.68 KB)

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Datasheet Details

Part number:

PBSS5350S

Manufacturer:

NXP ↗

File Size:

72.68 KB

Description:

50 v low vcesat pnp transistor.
DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS5350S 50 V low VCEsat PNP transistor Product speciﬁcation 2001 Nov 19 Philips Semiconductors.

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PBSS5350S low VCEsat PNP transistor NXP

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PBSS5350S Features

PBSS5350S General Description

Datasheet Details

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