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PTB23006U Datasheet - NXP

Microwave power transistor

PTB23006U Features

* Very high power gain

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure

* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life

* Multicell geometry improves power sha

PTB23006U General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. 3 2 Top view MAM131 PTB23006U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPE.

PTB23006U Datasheet (88.57 KB)

Preview of PTB23006U PDF

Datasheet Details

Part number:

PTB23006U

Manufacturer:

NXP ↗

File Size:

88.57 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Phili.

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PTB23006U Microwave power transistor NXP

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