PTB23006U transistor equivalent, microwave power transistor.
* Very high power gain
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure
* Gold metallization with barrie.
Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz. DESCRIPTION NPN silicon planar e.
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view
MAM131
PTB23006U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a co.
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