PTB23003X Datasheet, NXP

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.

Common-base, class B power amplifiers up to 4.2 GHz. 3 PTB23003X PINNING - SOT440A PIN 1 2 3 collector emitter base; co.

olumns 1 c b e MAM131 DESCRIPTION Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. Marking code: 2303X. Fig.1 Simplified outline and symbol. QUIC.