PTB23002U transistor equivalent, npn microwave power transistor.
* Very high power gain
* Internal input prematching network
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base struc.
Common-base, class C power amplifiers at frequencies up to 2.3 GHz. DESCRIPTION NPN silicon planar epitaxial microwave p.
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view
MAM131
PTB23002U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a co.
Image gallery
TAGS
Download