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NXP Semiconductors Electronic Components Datasheet

PTB23002U Datasheet

NPN microwave power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23002U
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 19


NXP Semiconductors Electronic Components Datasheet

PTB23002U Datasheet

NPN microwave power transistor

No Preview Available !

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23002U
FEATURES
Very high power gain
Internal input prematching network
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure
Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life
Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
Common-base, class C power
amplifiers at frequencies up to
2.3 GHz.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
Class C (CW)
f
VCC
PL
(GHz) (V) (W)
2.3 28 >2
Gp
(dB)
>9
ηC Zi; ZL
(%) ()
>45 see Figs 5
and 6
PINNING - SOT440A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, 4 columns
1
c
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.
b
3e
Top view
2
MAM131
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2


Part Number PTB23002U
Description NPN microwave power transistor
Maker NXP
Total Page 12 Pages
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