PTB23003X transistors equivalent, npn microwave power transistors.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Common-base, class B power amplifiers up to 4.2 GHz.
3
PTB23003X
PINNING - SOT440A PIN 1 2 3 collector emitter base; co.
olumns
1 c
b
e
MAM131
DESCRIPTION
Top view
2
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
Marking code: 2303X.
Fig.1 Simplified outline and symbol.
QUIC.
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