RX1214B300Y transistor equivalent, npn microwave power transistor.
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS.
* Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applicatio.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange.
3 2 Top view
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RX1214B300Y
PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTIO.
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