RX1214B80W transistors equivalent, npn microwave power transistors.
* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interd.
up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigita.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
RX1214B80W; RX1214B130Y
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowba.
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