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NXP Semiconductors Electronic Components Datasheet

RX1214B80W Datasheet

NPN microwave power transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B80W; RX1214B130Y
NPN microwave power transistors
Product specification
Supersedes data of November 1994
1997 Feb 14


NXP Semiconductors Electronic Components Datasheet

RX1214B80W Datasheet

NPN microwave power transistors

No Preview Available !

Philips Semiconductors
NPN microwave power transistors
Product specification
RX1214B80W; RX1214B130Y
FEATURES
Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input and output
prematching networks allow an
easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
CONDITIONS
Class C
tp = 500 µs;
RX1214B80W δ = 10%
Class C
tp = 150 µs;
RX1214B130Y δ = 5%
f
(GHz)
1.2 to
1.4
1.2 to
1.4
VCC
(V)
40
50
PL Gp
(W) (dB)
80 7
130 7
ηC
(%)
35
35
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
APPLICATIONS
Common-base class C broadband
pulsed power amplifiers for radar
applications in the 1.2 to 1.4 GHz
band. Also suitable for long pulse,
heavy duty operation within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
handbook, 4 columns
1
3
Top view
2
b
3
MAM045
Fig.1 Simplified outline and symbol.
c
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 14
2


Part Number RX1214B80W
Description NPN microwave power transistors
Maker NXP
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RX1214B80W Datasheet PDF






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