2N3055G Description
2N3055(NPN), MJ2955(PNP) Preferred Device plementary Silicon Power Transistors plementary silicon power transistors are designed for general−purpose switching and amplifier applications.
2N3055G Key Features
- DC Current Gain
- hFE = 20-70 @ IC = 4 Adc
- Collector-Emitter Saturation Voltage
- VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
- Excellent Safe Operating Area
- Pb-Free Packages are Available
- Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C
- 65 to +200 °C
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 6