2N6052 transistor equivalent, darlington complementary silicon power transistor.
* High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
* Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 100 Vdc (Min)
* Monolithic Construction.
Features
* High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
* Collector−Emitter Sustaining Voltage — @ 1.
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