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  ON Semiconductor Electronic Components Datasheet  

2N6052 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

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2N6052
Preferred Device
Darlington Complementary
Silicon Power Transistors
This package is designed for generalpurpose amplifier and low
frequency switching applications.
Features
High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
CollectorEmitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
This is a PbFree Device*
MAXIMUM RATINGS (Note 1)
Rating
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Value
100
100
5.0
12
20
0.2
150
0.857
65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase RqJC
1.17
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
http://onsemi.com
12 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTOR
100 VOLTS, 150 WATTS
COLLECTOR
CASE
BASE
1
EMITTER 2
MARKING
DIAGRAM
1
2
TO204AA (TO3)
CASE 107
STYLE 1
2N6052G
AYYWW
MEX
160
2N6052 = Device Code
140
G
= PbFree Package
A
= Location Code
120
YY
= Year
100
WW
= Work Week
MEX
= Country of Orgin
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ORDERING INFORMATION
Device
2N6052G
Package
TO3
(PbFree)
Shipping
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 Rev. 5
Publication Order Number:
2N6052/D


  ON Semiconductor Electronic Components Datasheet  

2N6052 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

No Preview Available !

2N6052
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
VCEO(sus)
100
ICEO
ICEX
Vdc
1.0
mAdc
mAdc
0.5
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
(VBE = 5.0 Vdc, IC = 0)
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
IEBO
hFE
2.0
mAdc
750
18,000
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Saturation Voltage
VCE(sat)
(IC = 6.0 Adc, IB = 24 mAdc)
(IC = 12 Adc, IB = 120 mAdc)
Vdc
2.0
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseEmitter On Voltage
(IC = 12 Adc, IB = 120 mAdc)
VBE(sat)
(IC = 6.0 Adc, VCE = 3.0 Vdc)
VBE(on)
4.0
Vdc
2.8
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Magnitude of Common Emitter SmallSignal Short Circuit Forward
Current Transfer Ratio
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SmallSignal Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
|hfe|
4.0
MHz
Cob
500
pF
hfe
300
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
VCC
- 30 V
 1N5825 USED ABOVE IB 100 mA
 MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ 8.0 V
0
51
D1
5.0 k 50
V1
approx
- 8.0 V
25 ms
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
10
5.0
ts
2.0
1.0
0.5
0.2
0.1
0.2
2N6052
2N6059
tf
tr
td @ VBE(off) = 0
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.5
1.0 3.0
5.0
10
20
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
http://onsemi.com
2


Part Number 2N6052
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Maker ON Semiconductor
PDF Download

2N6052 Datasheet PDF






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