2N6052
Key Features
- High DC Current Gain - hFE = 3500 (Typ) @ IC = 5.0 Adc
- Collector-Emitter Sustaining Voltage - @ 100 mA VCEO(sus) = 100 Vdc (Min)
- This is a Pb-Free Device*
- Part: 2N6052
- Description: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
- Category: Transistor
- Manufacturer: onsemi
- Size: 132.01 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6052 | Motorola Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6052 | NTE Electronics | Silicon PNP Transistor |
| 2N6052 | Inchange Semiconductor | Silicon PNP Power Transistors |
| 2N6058 | Motorola Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6050 | Seme LAB | Bipolar PNP Device |
| 2N6053 | Seme LAB | Bipolar PNP Device |
| 2N6055 | Seme LAB | Bipolar NPN Device |
| 2N6050 | Inchange Semiconductor | Silicon PNP Power Transistors |
| 2N6050 | Solid State | Power Transistor |
| 2N6058 | Solid State | Power Transistor |