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2N6052 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

onsemi

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2N6052 darlington complementary silicon power transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2N6052
Manufacturer	onsemi
File Size	132.01 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Datasheet	2N6052 Datasheet

Overview

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications.

Key Features

High DC Current Gain.
hFE = 3500 (Typ) @ IC = 5.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 100 mA VCEO(sus) = 100 Vdc (Min).
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
This is a Pb.
Free Device.

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