FCH023N65S3
Description
is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.
Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 19.5 mW
- Ultra Low Gate Charge (Typ. Qg = 222 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS pliant
Applications
- Tele / Server Power Supplies
