FCH041N60F Datasheet - ON Semiconductor

N-Channel MOSFET

FCH041N60F Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 36 mW

* Ultra Low Gate Charge (Typ. Qg = 277 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free, Halide Free, and is RoHS Compliant Applicatio

FCH041N60F General Description

SUPERFET II MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior s.

FCH041N60F Datasheet (298.10 KB)