FCH041N60F mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 36 mW
* Ultra Low Gate Charge (Typ. Qg = 277 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
*.
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s.
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