FCP600N60Z Datasheet - ON Semiconductor

N-Channel MOSFET

FCP600N60Z Features

* 650 V @ TJ = 150C

* Typ. RDS(on) = 510 mW

* Ultra Low Gate Charge (Typ. Qg = 20 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)

* 100% Avalanche Tested

* ESD Improved Capacity

* RoHS Compliant Applications

* LCD/LED/PDP TV and Monitor Lighting

FCP600N60Z General Description

SUPERFET II MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior s.

FCP600N60Z Datasheet (430.85 KB)