FCP600N60Z
Overview
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 510 mW
- Ultra Low Gate Charge (Typ. Qg = 20 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
- 100% Avalanche Tested
- ESD Improved Capacity
- RoHS Compliant
Datasheets by Manufacturer
- AP9563GH — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
- A2SHB — HAOHAI — N-Channel MOSFET
- AP9563GH-HF — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET