FDB6030BL
FDB6030BL is N-Channel MOSFET manufactured by onsemi.
FDP6030BL/FDB6030BL
FDP6030BL/FDB6030BL
N-Channel Logic Level Power Trench MOSFET
Features
General Description
- 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V.
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
- Critical DC electrical parameters specified at elevated temperature.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
- High performance trench technology for extremely low RDS(ON).
- 175°C maximum junction temperature rating.
TO-220
FDP Series
TO-263AB
FDB...
