FDB6021P - 20V P-Channel MOSFET
FDB6021P Features
* 28 A,
* 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V
* Critical DC electrical parameters specified at elevated temperature
* High performance trench technology for extremely low RDS(ON)
* 175°C maxim
