FDB603AL N-Channel MOSFET

Fairchild Semiconductor

Description

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: FDB603AL
Manufacturer: Fairchild Semiconductor
File Size: 414.54 KB
Datasheet: FDB603AL_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON).

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FDB603AL N-Channel MOSFET Fairchild Semiconductor

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