FDB603AL - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDB603AL
Manufacturer	Fairchild ↗ Semiconductor
File Size	414.54 KB
Description	N-Channel MOSFET
Datasheet	FDB603AL_FairchildSemiconductor.pdf

FDB603AL Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain.

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Published: Mar 30, 2005 |