FDD3670 Datasheet | onsemi

Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs f eature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. - 34 A, 100 V. RDS(ON) = 32 mΩ @ V GS = 10 V RDS(ON) = 35 mΩ @ V GS = 6 V - Low gate charge (57 n C typical) - Fast switching speed High performance trench technology for extremely - low RDS(ON) - High power and current handling capability S TO-252 Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS V GSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1) Drain Current - Pulsed (Note 3) Maximum Power Dissipation @ TC = 25°C (Note 1) @ TA = 25°C (Note 1a) @ TA = 25°C (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ C Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note...