FDG6306P
Description
This P- Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V
- 12 V).
Features
- - 0.6 A,
- 20 V
- RDS(ON) = 420 m W @ VGS =
- 4.5 V
- RDS(ON) = 630 m W @ VGS =
- 2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70- 6 Surface Mount Package
- These Devices are Pb- Free and are Ro HS pliant
Applications
- Battery Management
- Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain- Source Voltage
- 20
VGSS Gate- Source Voltage
±12
Drain Current
- Continuous
- 0.6
(Note 1)
- Pulsed
- 2.0
Power Dissipation for Single Operation
(Note 1)
TJ, TSTG Operating and Storage Junction Temperature...
