FDG6306P mosfet equivalent, p-channel mosfet.
* −0.6 A, −20 V
* RDS(ON) = 420 mW @ VGS = −4.5 V
* RDS(ON) = 630 mW @ VGS = −2.5 V
* Low Gate Charge
* High Performance Trench Technology for Extreme.
with a wide range of gate drive voltage (2.5 V − 12 V).
Features
* −0.6 A, −20 V
* RDS(ON) = 420 mW @ VGS = −4.5.
This P−Channel 2.5 V specified MOSFET is a rugged gate version
of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V).
Features
* −0.6 A, −20 V
.
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