Datasheet4U Logo Datasheet4U.com

FDG6306P - P-Channel MOSFET

Description

This P

of onsemi’s advanced PowerTrench process.

12 V).

Features

  • 0.6 A,.
  • 20 V.
  • RDS(ON) = 420 mW @ VGS =.
  • 4.5 V.
  • RDS(ON) = 630 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Compact Industry Standard SC70.
  • 6 Surface Mount Package.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDG6306P

Datasheet Details

Part number FDG6306P
Manufacturer ON Semiconductor
File Size 239.70 KB
Description P-Channel MOSFET
Datasheet download datasheet FDG6306P Datasheet
Additional preview pages of the FDG6306P datasheet.

📁 Similar Datasheet

  • FDG6306P - P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
  • FDG6301N - Dual N-Channel/ Digital FET (Fairchild Semiconductor)
  • FDG6302P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
  • FDG6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
  • FDG6304P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
  • FDG6308P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDG6313N - Dual N-Channel Digital FET (Fairchild Semiconductor)
  • FDG6316P - P-Channel 1.8V Specified PowerTrench MOSFET (Fairchild Semiconductor)
  • FDG6317NZ - Dual 20v N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDG6318P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 2.5 V FDG6306P General Description This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features • −0.6 A, −20 V ♦ RDS(ON) = 420 mW @ VGS = −4.5 V ♦ RDS(ON) = 630 mW @ VGS = −2.
Published: |