FDG6306P Description
This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V).
FDG6306P Key Features
- 0.6 A, -20 V
- RDS(ON) = 420 mW @ VGS = -4.5 V
- RDS(ON) = 630 mW @ VGS = -2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant