Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
150 V, 9.4 A, 134 mW
FDMC86244, FDMC86244-L701
General Description This N- Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
- Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- These Devices are Pb- Free and are RoHS pliant
Applications
- DC
- DC Conversion
.onsemi.
8 765
SSSG
DDDD
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WDFN8 3.3x3.3, 0.65P CASE...
