FDMC86244 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
* Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
* Low Profile − 1 mm Max in Power 33
* 100% UIL Tested
* DC − DC Conversion
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8 765
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1234
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WDFN8 3.3x3.3, 0.65P CASE 511DR
FDMC862.
This N−Channel MOSFET is produced using ON Semiconductor‘s
advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
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