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FDMS3672 - N-Channel MOSFET

Description

efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

  • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A.
  • Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A.
  • Typ Qg = 31 nC at VGS = 10 V.
  • Low Miller Charge.
  • Optimized Efficiency at High Frequencies.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMS3672

Datasheet Details

Part number FDMS3672
Manufacturer ON Semiconductor
File Size 278.95 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS3672 Datasheet
Additional preview pages of the FDMS3672 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A • Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A • Typ Qg = 31 nC at VGS = 10 V • Low Miller Charge • Optimized Efficiency at High Frequencies • This Device is Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
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