Datasheet4U Logo Datasheet4U.com

FDMS3672 N-Channel MOSFET

FDMS3672 Description

MOSFET * N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General .
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

FDMS3672 Features

* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A
* Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A
* Typ Qg = 31 nC at VGS = 10 V
* Low Miller Charge
* Optimized Efficiency at High Frequencies
* This Device is Pb
* Free, Halide Free and RoHS Complian

📥 Download Datasheet

Preview of FDMS3672 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDMS3600AS - MOSFET (Fairchild Semiconductor)
  • FDMS3600S - MOSFET (Fairchild Semiconductor)
  • FDMS3602AS - MOSFET (Fairchild Semiconductor)
  • FDMS3602S - MOSFET (Fairchild Semiconductor)
  • FDMS3604AS - MOSFET (Fairchild Semiconductor)
  • FDMS3604S - MOSFET (Fairchild Semiconductor)
  • FDMS3606AS - MOSFET (Fairchild Semiconductor)
  • FDMS3606S - Asymmetric Dual N-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMS3672-like datasheet