FDMS3672 Datasheet, ON Semiconductor

* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A
* Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A
* Typ Qg = 31 nC at VGS = 10 V
* Low Miller Charge
* Op.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features