FDMS3672 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General.

Datasheet Details

Part number	FDMS3672
Manufacturer	onsemi
File Size	278.95 KB
Description	N-Channel MOSFET
Datasheet	FDMS3672-ONSemiconductor.pdf

General Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Key Features

Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A.
Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A.
Typ Qg = 31 nC at VGS = 10 V.
Low Miller Charge.
Optimized Efficiency at High Frequencies.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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