FDMS3672 - N-Channel MOSFET

ON Semiconductor

FDMS3672 Datasheet Preview — Preview of FDMS3672 PDF

Datasheet Details

Part number	FDMS3672
Manufacturer	ON Semiconductor ↗
File Size	278.95 KB
Description	N-Channel MOSFET
Datasheet	FDMS3672-ONSemiconductor.pdf

FDMS3672 Product details

Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A.
Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A.
Typ Qg = 31 nC at VGS = 10 V.
Low Miller Charge.
Optimized Efficiency at High Frequencies.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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Published: Dec 20, 2023 |