FDMS3672
Description
UItra FET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max RDS(on) = 23 m W at VGS = 10 V, ID = 7.4 A
- Max RDS(on) = 29 m W at VGS = 6 V, ID = 6.6 A
- Typ Qg = 31 n C at VGS = 10 V
- Low Miller Charge
- Optimized Efficiency at High Frequencies
- This Device is Pb- Free, Halide Free and Ro HS pliant
Applications
- DC- DC Conversion
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value Unit
VDS Drain- Source Voltage
VGS Gate- Source Voltage
±20
Drain Current
- Continuous (Package Limited) TC = 25°C 22
- Continuous (Silicon Limited) TC = 25°C 41
- Continuous (Note 1a)
TA = 25°C 7.4
- Pulsed
PD Power Dissipation
TC = 25°C 78
Power Dissipation (Note 1a)
TA = 25°C 2.5
TJ, TSTG Operating and Storage Junction Temperature Range
-...
