FDMS6681Z mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 3.2 mW at VGS = −10 V, ID = −21.1 A
* Max rDS(on) = 5.0 mW at VGS = −4.5 V, ID = −15.7 A
* Advanced Package and Silicon Combination for Low rD.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
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