FDMS86101DC Datasheet N-Channel MOSFET

Manufacturer: onsemi

FDMS86101DC n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMS86101DC
Manufacturer	onsemi
File Size	458.66 KB
Description	N-Channel MOSFET
Download	FDMS86101DC Download (PDF)

General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.

Overview

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.

Key Features

Shielded Gate MOSFET Technology.
DUAL COOL Top Side Cooling PQFN package.
Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A.
Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A.
High performance technology for extremely low RDS(on).
100% UIL Tested.
RoHS Compliant Typical.

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