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MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate
100 V, 60 A, 7.5 mW
FDMS86101DC
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
• Shielded Gate MOSFET Technology • DUAL COOL Top Side Cooling PQFN package • Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A • Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.
FDMS86101DC Datasheet
