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FDMS86101DC - N-Channel MOSFET

FDMS86101DC Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction to Ambient thermal resistance. Shielded Gate MOSFET Technology DUAL COOL Top Side Cooling PQFN package Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A High performance technology for extremely low RDS(on) 100% UIL Tested RoHS Compliant Typical Applications Primary DC DC MOSFET Secondary Synchronous Rectifier

Features

  • Shielded Gate MOSFET Technology.
  • DUAL COOL Top Side Cooling PQFN package.
  • Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A.
  • Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A.
  • High performance technology for extremely low RDS(on).
  • 100% UIL Tested.
  • RoHS Compliant Typical.

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N-Channel MOSFET ON Semiconductor
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