n-channel mosfet.
* Shielded Gate MOSFET Technology
* DUAL COOL Top Side Cooling PQFN package
* Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A
* Max RDS(on) = 12 mW at VGS.
* Primary DC−DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch
DATA SHEET www.onsemi.com
ELECTRICA.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaini.
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