Description
These P-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2 D1
D1
FD69S75
SO-8
G2
S2
pin 1
G1 S1
SO-8
SOT-223
SOIC-16
54 63 72 81
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuo.
FDS6975-ONSemiconductor.pdf
