Description
This P
Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on
state resistance, and to provide superior switching performance and high avalanche energy strength.
Features
- 30 A,.
- 60 V, RDS(on) = 26 mW (Max. ) @ VGS =.
- 10 V, ID =.
- 15 A.
- Low Gate Charge (Typ. 84 nC).
- Low Crss (Typ. 320 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
DATA SHEET www. onsemi. com
VDSS.
- 60 V
RDS(ON) MAX 26 mW @.
- 10 V
S
ID MAX.
- 30 A
G
D P.
- Channel MOSFET
GDS
TO.
- 220F
TO.
- 220 Fullpack, 3.
- Lead / TO.
- 220F.
- 3SG CASE 221A.