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RF Transistor

MJB45H11G ON Semiconductor

MJB45H11G PNP Transistor

MJB45H11G Avg. rating / M : star-115

datasheet Download

MJB45H11G Datasheet

Features and benefits


• Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets.

Application

such as switching regulators, converters and power amplifiers. Features
• Low Collector−Emitter Saturation Voltage .

Image gallery

MJB45H11G MJB45H11G MJB45H11G

TAGS
MJB45H11G
PNP
Transistor
MJB45H11
MJB41C
MJB42C
ON Semiconductor
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