NTH4L013N120M3S SiC MOSFET
• Typ. RDS(on) = 13 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 254 nC)
• High Speed Switching with Low Capacitance (Coss = 262 pF)
• 100% Avalanch.
• Solar Inverters
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy S.
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