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PAN3060C Datasheet 30V N-channel enhancement mode MOSFET

Manufacturer: PSD

Overview: PAN3060C 30V N-channel enhancement mode MOSFET General.

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Datasheet Details

Part number PAN3060C
Manufacturer PSD
File Size 1.60 MB
Description 30V N-channel enhancement mode MOSFET
Download PAN3060C Download (PDF)

General Description

The PAN3060C is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

This device is suitable for use in UPS, power switching and general purpose applications.

PAN3060C is packaged in PDFN5*6 package.

Key Features

  • VDS(max) =30V.
  • ID (max)=60A.
  • Extremely Low RDS(on): Typ. RDS(on) = 3.3 mΩ @VGS=10 V, ID=30 A.
  • Good stability and uniformity.
  • 100% avalanche tested.
  • Excellent package for good heat dissipation.

More Datasheets from PSD

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PAN3080L 30V N-channel enhancement mode MOSFET