PAN3060C Datasheet, MOSFET, PSD

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PAN3060C Features and benefits

* VDS(max) =30V
* ID (max)=60A
* Extremely Low RDS(on): Typ.RDS(on) = 3.3 mΩ @VGS=10 V, ID=30 A
* Good stability and uniformity
* 100% avalanche teste.

PAN3060C Application

PAN3060C is packaged in PDFN5*6 package. Features
* VDS(max) =30V
* ID (max)=60A
* Extremely Low RDS(on): .

PAN3060C Description

The PAN3060C is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3060C is package.

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