* 1 MA2H735 IF V F 1 Schottky Barrier Diodes (SBD) IR V R 10 Ta = 125°C 1 75°C 25°C
* 20°C Ct VR 300 Ta = 25°C 75°C 10
* 1 Terminal capacitance Ct (pF) Ta = 125°C 10
* 1 250 Reverse current IR (mA) Forward current IF (A) 200 10
* 2 150 10
* 3 10
MA2H735
Panasonic
43.79 KB
Schottky barrier diodes (sbd).
Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 Small and thin H.
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