2PG402 transistor equivalent, insulated gate bipolar transistor.
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package
unit: mm
6.5± 0.1 5.3± 0.1 4.35± 0.1 3.
s Absolute Maximum Ratings (TC = 25°C)
Parameter Collector to emitter voltage Gate to emitter voltage Collector current.
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