q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package
unit: mm
6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1
q For flash-light for use in a camera
2.3± 0.1
0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2
s.
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IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package
unit: mm
6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1
q For flash-light for use in a camera
2.3± 0.1
0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2
s Applications
s Absolute Maximum Ratings (TC = 25°C)
Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 10 1 150 −55 to +150 Unit V V A A W °C °C
2.5± 0.1 2.5± 0.1
0.85± 0.1 4.6± 0.1
0.75± 0.1 0.5± 0.1 0.05 to 0.15
1.0± 0.1
2.3± 0.
2PG402 Datasheet
