• Part: 2SB1070
  • Description: Silicon PNP epitaxial planar type Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 109.49 KB
Download 2SB1070 Datasheet PDF
Panasonic
2SB1070
Features - Low collector-emitter saturation voltage VCE(sat) - High-speed switching - N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 4.4±0.5 - Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating - 40 - 50 - 20 - 40 - 5 - 4 - 8 25 1.3 150 - 55 to +150 °C °C V A A W V Unit V Collector-emitter voltage 2SB1070 (Base open) 2SB1070A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (6.5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. - Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB1070 2SB1070A 2SB1070 2SB1070A IEBO h FE1 h FE2 Base-emitter saturation voltage Collector-emitter...