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2SB1070A Datasheet

Silicon PNP epitaxial planar type Transistor

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2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
Features
Low collector-emitter saturation voltage VCE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB1070 VCBO
2SB1070A
40
50
Collector-emitter voltage 2SB1070 VCEO
(Base open)
2SB1070A
20
40
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
4
8
25
1.3
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB1070 VCEO
2SB1070A
IC = −10 mA, IB = 0
20
40
V
Collector-base cutoff
current (Emitter open)
2SB1070 ICBO
2SB1070A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2 *
VBE(sat)
VCE(sat)
fT
ton
tstg
tf
VCB = −40 V, IE = 0
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −1 A
IC = −2 A, IB = − 0.1 A
IC = −2 A, IB = − 0.1 A
VCE = −5 V, IC = − 0.5 A, f = 10 MHz
IC = −2 A
IB1 = − 0.2 A, IB2 = 0.2 A
VCC = −20 V
50 µA
50
50 µA
45
90 260
1.5 V
0.5 V
150 MHz
0.3 µs
0.4 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: February 2003
SJD00040AED
1


Panasonic Electronic Components Datasheet

2SB1070A Datasheet

Silicon PNP epitaxial planar type Transistor

No Preview Available !

2SB1070, 2SB1070A
PC Ta
40
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
30
(1)
20
10
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
IC VCE
6
IB=–80mA
TC=25˚C
5
–50mA
–45mA
4 –40mA
–35mA
–30mA
3 –25mA
–20mA
2
–15mA
–10mA
1
–5mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
10
1
0.1
VCE(sat) IC
IC/IB=20
TC=100˚C
25˚C
–25˚C
0.01
0.01
0.1
1
Collector current IC (A)
10
100
VBE(sat) IC
IC/IB=20
10
TC=–25˚C
25˚C
100˚C
1
1 000
100
10
hFE IC
TC=100˚C
25˚C
VCE=–2V
–25˚C
1 000
100
10
fT IC
VCE=–2V
f=10MHz
TC=25˚C
0.1
1
0.01
0.01
0.1
1
Collector current IC (A)
10
0.1
0.01
0.1
1
Collector current IC (A)
10
1
0.1
0.01
0.1
1
Collector current IC (mA)
10
ton , tstg , tf IC
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–20V
TC=25˚C
1
ton
tstg
0.1 tf
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
1 t=300ms
t=1ms
t=10ms
0.1
0.01
0
2 4 6
Collector current IC (A)
8
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2 SJD00040AED


Part Number 2SB1070A
Description Silicon PNP epitaxial planar type Transistor
Maker Panasonic Semiconductor
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2SB1070A Datasheet PDF






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