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2SD1892 Datasheet

Silicon PNP epitaxial planar type Transistor

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Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1252
s Features
q Optimum for 35W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): <2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
120
100
5
8
5
45
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 120V, IE = 0
VCE = 100V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 4A
IC = 4A, IB = 4mA
IC = 4A, IB = 4mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 4mA, IB2 = –4mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
min
100
2000
5000
typ max Unit
100 µA
100 µA
100 µA
V
30000
2.5 V
3.0 V
20 MHz
2.5 µs
3.5 µs
1.0 µs
1


Panasonic Electronic Components Datasheet

2SD1892 Datasheet

Silicon PNP epitaxial planar type Transistor

No Preview Available !

Power Transistors
60
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=1000
30
10
TC=100˚C
3 25˚C
–25˚C
1
0.3
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=1000 (IB1=–IB2)
VCC=50V
10 TC=25˚C
tstg
3
ton
1
tf
0.3
0.1
0.03
0.01
0
246
Collector current IC (A)
8
IC — VCE
6
TC=25˚C
5 IB=0.8mA
0.7mA
0.6mA
4
0.5mA
3 0.4mA
0.3mA
2
0.2mA
1 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1892
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
1
100˚C
25˚C
0.3
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
100000
30000
10000
hFE — IC
VCE=5V
3000
TC=100˚C
1000
25˚C
300
–25˚C
100
30
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1
3
10 30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
t=1ms
10ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SD1892
Description Silicon PNP epitaxial planar type Transistor
Maker Panasonic Semiconductor
Total Page 3 Pages
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