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Panasonic Electronic Components Datasheet

2SD1975A Datasheet

Silicon NPN triple diffusion planar type(For high power amplification)

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2SD1975A pdf
Power Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1317 and 2SB1317A
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1975
base voltage 2SD1975A
VCBO
180
200
Collector to 2SD1975
emitter voltage 2SD1975A
VCEO
180
200
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
25
15
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
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s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1975
current
2SD1975A
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = 180V, IE = 0
VCB = 200V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
IC = 10A, IB = 1A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P
100 to 200
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
50
µA
50
50 µA
20
60 200
20
1.8 V
2.5 V
20 MHz
200 pF
1


Panasonic Electronic Components Datasheet

2SD1975A Datasheet

Silicon NPN triple diffusion planar type(For high power amplification)

No Preview Available !

2SD1975A pdf
Power Transistors
200
(1)
150
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
100
50
(3)
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3
1 TC=100˚C 25˚C
–25˚C
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
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Cob — VCB
10000
3000
IE=0
f=1MHz
TC=25˚C
1000
300
100
30
10
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
24
TC=25˚C
20 IB=1000mA
800mA
700mA
600mA
16 500mA
400mA
300mA
12
200mA
8 100mA
4
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1975, 2SD1975A
IC — VBE
24
VCE=5V
20
16 25˚C
TC=–25˚C
12
100˚C
8
4
0
01234
Base to emitter voltage VBE (V)
hFE — IC
1000
300
TC=100˚C
25˚C
100
–25˚C
30
VCE=5V
10
3
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
30 ICP
Non repetitive pulse
TC=25˚C
10 IC
3
100ms
t=10ms
1 DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SD1975A
Description Silicon NPN triple diffusion planar type(For high power amplification)
Maker Panasonic Semiconductor
Total Page 3 Pages
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