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2SD2527 Datasheet

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

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Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
80
60
6
8
4
1
40
2.0
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
ICBO
ICEO
IEBO
VCEO
hFE*
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.8A
100 µA
100 µA
100 µA
60 V
500 2000
Collector to emitter saturation voltage
Transition frequency
Storage time
VCE(sat)
fT
tstg
IC = 3A, IB = 0.075A
VCE = 12V, IC = 0.3A, f = 10MHz
IC = 3A, IB1 = 0.06A, IB2 = – 0.06A, VCC = 50V
0.7 V
30 MHz
20 µs
*hFE Rank classification
Rank
Q
P
hFE 500 to 1200 800 to 2000
1


Panasonic Electronic Components Datasheet

2SD2527 Datasheet

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

No Preview Available !

Power Transistors
IC — VCE
1.6
TC=25˚C
1.4
1.2
1.0 IB=1.0mA
0.9mA
0.8mA
0.8 0.7mA
0.6mA
0.6 0.5mA
0.4mA
0.4
0.3mA
0.2 0.2mA
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
104
VCE=4V
103
102
10
10–2
10–1
1
Collector current IC (A)
10
Area of safe operation (ASO)
Non repetitive pulse
30 TC=25˚C
10 ICP
IC 10ms
3
t=1ms
1 1s
0.3
0.1
3 10 30 100 300
Collector to emitter voltage VCE (V)
IC — VBE
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
fT — IC
300
VCE=12V
f=10MHz
TC=25˚C
100
30
10
3
0.003 0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
2SD2527
VCE(sat) — IC
10
IC/IB=40
1
10–1
10–2
10–3
10–2
10–1
1
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=40 (IB1=–IB2)
VCC=50V
10 TC=25˚C
tstg
3
1 tf
0.3 ton
0.1
0.03
0.01
0
246
Collector current IC (A)
8
2


Part Number 2SD2527
Description Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)
Maker Panasonic Semiconductor
Total Page 2 Pages
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