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Panasonic Electronic Components Datasheet

2SD601A Datasheet

Silicon NPN epitaxial planer type

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Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB709A
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
7
200
100
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
0.1 µA
100 µA
60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE1*
hFE2
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
50 V
7V
160 460
90
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 10mA
0.1 0.3
V
Transition frequency
fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100k, Function = FLAT
110 mV
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5 pF
*hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
160 ~ 260
ZQ
R
210 ~ 340
ZR
S
290 ~ 460
ZS
1


Panasonic Electronic Components Datasheet

2SD601A Datasheet

Silicon NPN epitaxial planer type

No Preview Available !

Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VBE
200
VCE=10V
160
120
25˚C
Ta=75˚C –25˚C
80
40
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=10V
500
400 Ta=75˚C
25˚C
300
–25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2SD601A
IC — VCE
60
Ta=25˚C
IB=160µA
50
140µA
40 120µA
100µA
30
80µA
20 60µA
40µA
10
20µA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
1200
1000
IB — VBE
VCE=10V
Ta=25˚C
800
600
400
200
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
IC — IB
240
VCE=10V
Ta=25˚C
200
160
120
80
40
0
0 200 400 600 800 1000
Base current IB (µA)
fT — IE
300
VCB=10V
Ta=25˚C
240
180
120
60
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
25˚C
Ta=75˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — IC
240
VCE=10V
GV=80dB
200 Function=FLAT
Ta=25˚C
160
Rg=100k
120
80
22k
40 4.7k
0
10 30
100 300 1000
Collector current IC (mA)
2


Part Number 2SD601A
Description Silicon NPN epitaxial planer type
Maker Panasonic Semiconductor
Total Page 2 Pages
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