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2SD60 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 75V(Min) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier and switching applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD60 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 75V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.