2SD600 transistor equivalent, pnp/npn epitaxial planar silicon transistor.
* High breakdown voltage VCEO 100/120V, High current 1A.
* Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm 2009B
[2SB631, 631K/2SD600.
Features
* High breakdown voltage VCEO 100/120V, High current 1A.
* Low saturation voltage, excellent hFE linear.
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