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Panasonic Electronic Components Datasheet

2SD973 Datasheet

Silicon NPN epitaxial planer type(For low-frequency power amplification)

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Transistor
2SD973, 2SD973A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
s Absolute Maximum Ratings (Ta=25˚C)
0.85
Parameter
Symbol
Ratings
Unit
Collector to 2SD973
base voltage 2SD973A
VCBO
30
60
V
Collector to 2SD973
emitter voltage 2SD973A
VCEO
25
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base 2SD973
voltage
2SD973A
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1 µA
30
V
60
Collector to emitter 2SD973
voltage
2SD973A
VCEO
IC = 2mA, IB = 0
25
50
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
*1hFE1 Rank classification
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 500mA*2
85 160 340
VCE = 5V, IC = 1A*2
50 100
IC = 500mA, IB = 50mA*2
0.2 0.4
V
IC = 500mA, IB = 50mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0. f = 1MHz
11 20 pF
*2 Pulse measurement
Rank
Q
R
S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
1


Panasonic Electronic Components Datasheet

2SD973 Datasheet

Silicon NPN epitaxial planer type(For low-frequency power amplification)

No Preview Available !

Transistor
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2 the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3
1
0.3 Ta=75˚C
25˚C
0.1 –25˚C
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
200 VCB=10V
Ta=25˚C
fT — IE
160
120
80
40
0
–1 –3 –10 –30 –100
Emitter current IE (mA)
IC — VCE
1.50
Ta=25˚C
1.25
1.00
0.75
0.50
0.25
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
1 Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
50
IE=0
f=1MHz
Ta=25˚C
40
30
20
10
0
13
10 30 100
Collector to base voltage VCB (V)
2SD973, 2SD973A
1.2
VCE=10V
Ta=25˚C
1.0
IC — IB
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Base current IB (mA)
hFE — IC
600
VCE=10
500
400
300
Ta=75˚C
200
25˚C
–25˚C
100
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
VCER — RBE
120
IC=10mA
Ta=25˚C
100
80
60
2SD973A
40
2SD973
20
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance RBE (k)
2


Part Number 2SD973
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)
Maker Panasonic Semiconductor
Total Page 3 Pages
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