Part number:
LNA2W01L
Manufacturer:
Panasonic Semiconductor
File Size:
44.34 KB
Description:
Gaas infrared light emitting diode.
LNA2W01L_PanasonicSemiconductor.pdf
Datasheet Details
LNA2W01L Features
* High-power output, high-efficiency : PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 1.05±0.1 1 0.5±0.1 Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 45 ˚ 2.2±0.15
LNA2W01L_PanasonicSemiconductor.pdf
Datasheet Details
LNA2W01L
Panasonic Semiconductor
44.34 KB
Gaas infrared light emitting diode.
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