* 1 Composite Transistors PT
* Ta 500 XN121M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 240 10 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE
* IC VCE=1
XN121M
Panasonic Semiconductor
33.76 KB
Npn epitaxial planer transistor.
Composite Transistors XN121M NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.6.
📁 Related Datasheet
XN1210 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1211 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1212 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1213 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1214 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1215 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1216 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1217 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN121E Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN121F Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
