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Panasonic Electronic Components Datasheet

XN121M Datasheet

NPN epitaxial planer transistor

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Composite Transistors
XN121M
NPN epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN221M × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: EM
Internal Connection
Tr1
5
1
4
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
80
0.5
4.9
–30%
2
Tr2
typ max
0.1
0.5
0.2
0.99
0.06 0.25
2.2
0.047
150
0.2
+30%
Unit
V
V
µA
µA
mA
V
V
V
k
MHz
1


Panasonic Electronic Components Datasheet

XN121M Datasheet

NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
XN121M
IC — VCE
240
Ta=25˚C
200 IB=1.0mA
0.9mA
0.8mA
0.7mA
160
0.6mA
120
0.5mA
0.4mA
0.3mA
80 0.2mA
40 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
IC/IB=10
3
1
0.3
Ta=75˚C
0.1 25˚C
0.03
– 25˚C
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector current IC (mA)
hFE — IC
500
VCE=10V
400
300
Ta=75˚C
25˚C
200
–25˚C
100
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
5
f=1MHz
IE=0
Ta=25˚C
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IO — VIN
104
VO=5V
Ta=25˚C
103
102
101
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
VIN — IO
100
VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2


Part Number XN121M
Description NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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