advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. QPD2025D 250 um Discrete GaAs pHEMT The QPD2025D typically provi.

The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection..

250 um GaAs pHEMT 1 of 2 www.qorvo.com QPD2025D ® 250 um Discrete GaAs pHEMT Absolute Maximum Ratings1 Parameter Absolute Continuous Units Drain-Source Voltage (VDS)(2) 12 8 V Gate-Source Voltage (VGS) -7 -3 V Drain Current (IDS)(2.

QPD0005M

QPD0030

QPD0050

QPD0305

QPD1003

QPD1006

QPD1011

QPD1013

QPD1018

QPD1026L

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