HAF2027S Datasheet | Renesas

HAF2027(L), HAF2027(S) Silicon N Channel Power MOS FET Power Switching REJ03G1674-0100 Rev.1.00 May 19, 2008 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive) - Built-in the over temperature shut-down circuit - High endurance capability against to the shut-down circuit - Latch type shut down operation (need 0 voltage recovery) Outline RENESAS Package code:...