IDTQS3306A Datasheet Text
IDTQS3306A HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ENABLES
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH® PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES
IDTQS3306A
Features
:
- Enhanced N channel FET with no inherent diode to Vcc
- Very low ON resistance (5Ω typical)
- Zero propagation delay, zero added ground bounce
- Fast turn-on/turn-off time
- Undershoot clamp diodes on all switch and control inputs
- Available in SOIC package
APPLICATIONS:
- Line control
- Hot-swapping, hot-docking
- Voltage translation (5V to 3.3V)
- Power conservation
- Capacitance reduction and isolation
- Clock gating
- Bus isolation
- Signal suppression/blanking
DESCRIPTION:
The QS3306A provides a set of two high-speed low resistance (3Ω typical) CMOS switches connecting inputs to outputs without propagation delay and without generating additional ground bounce noise. Individual enables (OE) are used to turn on the switches. The QS3306A is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system. The QS3306A can also be used for analog switching applications such as video.
The QS3306A is characterized for operation at -40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
1A 2A
1OE
2OE
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INDUSTRIAL TEMPERATURE RANGE 1 c 2011 Integrated Device Technology, Inc....
