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M6MGB331S4BKT - CMOS SRAM

Download the M6MGB331S4BKT datasheet PDF. This datasheet also covers the M6MGT331S4BKT variant, as both devices belong to the same cmos sram family and are provided as variant models within a single manufacturer datasheet.

Description

The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP for lead free use.

Features

  • 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T331S4BKT is suitable for the.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M6MGT331S4BKT_Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

Part Number Description
M6MGB331S8AKT CMOS SRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S4BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP for lead free use. 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, Features 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell.
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