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M6MGT33BS8BWG Datasheet CMOS Sram

Manufacturer: Renesas

Overview: .. Preliminary Notice: This is not a final specification. Some parametric limits are subject to change.

General Description

The M6MGB/T33BS8BWG is a Stacked Chip Scale Package The M6MGB/T33BS8BWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 32M-bit Flash memory and 8M-bit mounting area, weight and small power dissipation.

SRAM in a 66-pin Stacked CSP for lead free use.

32M-bit Flash memory is a 2,097,152 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR) architecture for the memory cell.

Key Features

  • Access Time Flash SRAM 70ns (Max. ) 85ns (Max. ) F-VCC =VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Outer-ball:Sn.
  • Ag-Cu Supply Voltage Ambient Temperature Package.

M6MGT33BS8BWG Distributor