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NP160N04TUK - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ).
  • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ).
  • Designed for automotive.

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Datasheet Details

Part number NP160N04TUK
Manufacturer Renesas
File Size 221.74 KB
Description MOS FIELD EFFECT TRANSISTOR
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Full PDF Text Transcription

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NP160N04TUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUK-E1-AY ∗1 NP160N04TUK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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